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| PD- 93817 IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * UltraFast Non Punch Through (NPT) Technology * Low Diode VF (1.67V Typical @ 20A & 25C) * 10 s Short Circuit Capability * Square RBSOA * UltraSoft Diode Recovery Characteristics * Positive VCE(on) Temperature Coefficient * Extended Lead TO-247AD Package C UltraFast CoPack IGBT VCES = 1200V VCE(on) typ. = 3.05V G VGE = 15V, IC = 20A, 25C E N-channel Benefits * Benchmark Efficiency Above 20KHz * Optimized for Welding, UPS, and Induction Heating Applications * Rugged with UltraFast Performance * Low EMI * Significantly Less Snubber Required * Excellent Current Sharing in Parallel Operation * Longer Leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.1) Continuous Collector Current (Fig.1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (Fig.2) Maximum Power Dissipation (Fig.2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw. Max. 1200 40 20 120 120 20 120 20 300 120 -55 to + 150 300, (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt ZJC Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Transient Thermal Impedance Junction-to-Case Min. --- --- --- --- --- (Fig.24) Typ. --- --- 0.24 --- 6 (0.21) Max. 0.42 0.83 --- 40 --- Units C/W g (oz) www.irf.com 1 12/14/99 IRGP20B120UD-E Electrical C h aracteristics @ T J = 25C (u n less o th erw ise sp ecified ) P aram eter V (B R )C E S C o lle cto r-to -E m itte r B re a kd o w n V o lta g e V (B R )C E S / Tj T e m p e ra tu re C o e ff. o f B re a kd o w n V o lta g e M in. 1200 Typ. + 1 .2 3 .0 5 M ax. Units V 3 .4 5 3 .8 0 4 .8 5 4 .5 0 5 .0 6 6 .0 1 7 .8 250 750 2200 1 .9 6 2 .0 6 2 .0 3 2 .1 8 1 0 0 nA V V mV/ C o Conditions V G E = 0 V ,I c = 2 5 0 A IC = 2 0 A , V G E = 1 5 V IC = 2 5 A , V G E = 1 5 V Fig. V /C V G E = 0 V , Ic = 1 m A ( 2 5 -1 2 5 o C ) 5, 6 7, 9 10 11 C o lle cto r-to -E m itte r S a tu ra tio n 3 .3 7 4 .2 3 3 .8 9 4 .3 1 V C E (on) V o lta g e V IC = 4 0 A , V G E = 1 5 V I C = 2 0 A , V G E = 1 5 V , T J = 1 2 5 C I C = 2 5 A , V G E = 1 5 V , T J = 1 2 5 C V C E = V G E , IC = 2 5 0 A V C E = V G E , I C = 1 m A (2 5 -1 2 5 C ) V C E = 5 0 V , IC = 2 0 A , P W = 8 0 s VGE = 0 V, VCE = 1 2 0 0 V V G E = 0 V , V C E = 1 2 0 0 V , T J = 1 2 5 C V G E = 0 V , V C E = 1 2 0 0 V , T J = 1 5 0 C IC = 2 0 A IC = 2 5 A I C = 2 0 A , T J = 1 2 5 C I C = 2 5 A , T J = 1 2 5 C VGE = 20V o V G E (th) V G E (th) / Tj G a te T h re sh o ld V o lta g e T e m p e ra tu re C o e ff. o f T h re sh o ld V o lta g e F o rw a rd T ra n sco n d u cta n ce 4 .0 1 3 .6 5 .0 - 1 .2 1 5 .7 420 1482 1 .6 7 9,10,11,12 g fe IC E S S A Z e ro G a te V o lta g e C o lle cto r C u rre n t V FM D io d e F o rw a rd V o lta g e D ro p 1 .7 6 1 .7 3 1 .8 7 8 IG E S G a te -to -E m itte r L e a ka g e C u rre n t Sw itch in g C h aracteristics @ T J = 25C (u n less o th erw ise sp ecified ) P aram eter Qg Q ge Q gc E on E off E tot E on E off E tot td (o n ) tr td (o ff) tf C ies C oes C res R BSO A T o ta l G a te ch a rg e (tu rn -o n ) G a te - E m itte r C h a rg e (tu rn -o n ) G a te - C o lle cto r C h a rg e (tu rn -o n ) T u rn -O n S w itch in g L o ss T u rn -O ff S w itch in g L o ss T o ta l S w itch in g L o ss T u rn -o n S w itch in g L o ss T u rn -o ff S w itch in g L o ss T o ta l S w itch in g L o ss T u rn - o n d e la y tim e R ise tim e T u rn - o ff d e la y tim e F a ll tim e In p u t C a p a cita n ce O u tp u t C a p a cita n ce R e ve rse T ra n sfe r C a p a cita n ce M in. Typ. 169 24 82 850 425 1275 1350 610 1960 50 20 204 24 2200 210 85 M ax. Units 254 36 126 1050 650 1800 1550 875 2425 65 30 230 35 VGE = 0V IC = 2 0 A Conditions VCC = 6 0 0 V VGE = 15V IC = 2 0 A , V C C = 6 0 0 V Fig. 23 CT 1 nC CT 4 WF 1 WF 2 13, 15 CT 4 WF 1 & 2 14, 16 CT 4 WF 1 WF 2 J V G E = 1 5 V , R g = 5 , L = 200H T J = 2 5 C , E n e rg y lo sse s in clu d e ta il a n d d io d e re ve rse re co ve ry o Ic = 2 0 A , V C C = 6 0 0 V J V G E = 1 5 V , R g = 5 , L = 200H T J = 1 2 5 C , E n e rg y lo sse s in clu d e ta il a n d d io d e re ve rse re co ve ry o Ic = 2 0 A , V C C = 6 0 0 V ns V G E = 1 5 V , R g = 5 , L = 200H TJ = 125 C o pF VCC = 3 0 V f = 1 .0 M H z T J = 1 5 0 C , Ic = 1 2 0 A o 22 4 CT 2 R e ve rse b ia s sa fe o p e ra tin g a re a FU L L S Q U A R E VCC = 1 0 0 0 V, VP = 1 2 0 0 V R g = 5 , V G E = + 1 5 V to 0 V TJ = 150 C o CT 3 WF 4 SC SO A E rec trr Irr Le S h o rt C ircu it S a fe O p e ra tin g A re a 10 ---1600 300 32 13 ---2100 36 s J ns A nH VCC = 9 0 0 V, VP = 1 2 0 0 V R g = 5 , V G E = + 1 5 V to 0 V o R e ve rse re co ve ry e n e rg y o f th e d io d e D io d e R e ve rse re co ve ry tim e P e a k R e ve rse R e co ve ry C u rre n t In te rn a l E m itte r In d u cta n ce TJ = 125 C V C C = 6 0 0 V , Ic = 2 0 A V G E = 1 5 V , R g = 5 , L = 200H M e a su re d 5 m m fro m th e p a cka g e . 17,18,19 20, 21 CT 4, WF 3 2 www.irf.com IRGP20B120UD-E Fig.1 - Maximum DC Collector Current vs. Case Temperature 50 45 40 240 F ig .2 - P o w e r D is s ip a tio n v s . C a s e T e m p e ra tu re 320 280 35 (A) I 20 15 P 120 80 40 0 10 5 0 0 40 80 120 160 to t 25 (W ) 30 200 160 C 0 40 80 T C (C ) 120 160 T C (C) Fig.3 - Forward SOA T C =25C; Tj < 150C 1000 PULSED 2s F ig .4 - R e v e rs e B ia s S O A T j = 1 5 0 C , V G E = 1 5 V 1000 100 10s 100 100s IC (A) 10 1ms 1 10ms DC 0.1 1 10 100 V CE (V) 1000 10000 I 10 1 1 10 V CE C (A ) 100 (V ) 1000 10000 www.irf.com 3 IRGP20B120UD-E Fig.5 - Typical IGBT Output Characteristics Tj= -40C; tp=300s 60 55 50 45 40 (A) 35 30 25 20 15 10 5 0 0 1 2 3 V CE (V) 4 5 6 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8V Fig.6 - Typical IGBT Output Characteristics Tj=25C; tp=300s 60 55 50 45 40 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8V (A) C 35 30 25 20 15 10 5 0 0 1 2 3 4 V CE (V) 5 6 I C Fig.7 - Typical IGBT Output Characteristics Tj=125C; tp=300s 60 55 50 45 40 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8V I 60 55 50 45 40 (A) 35 30 25 20 15 10 5 0 Fig.8 - Typical Diode Forward Characteristic tp=300s - 40C 25C 125C (A) C 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 I I F 0 1 V CE (V) 2 V F (V) 3 4 4 www.irf.com IRGP20B120UD-E Fig.9 - Typical V CE vs V GE Tj= -40C 20 18 16 14 V CE ( V ) V CE ( V ) 20 18 16 14 12 10 8 6 4 2 0 Fig.10 - Typical V CE vs V GE Tj= 25C 12 10 8 6 4 2 0 6 8 10 12 14 V GE (V) 16 18 20 I CE =10A I CE =20A I CE =40A I CE =10A I CE =20A I CE =40A 6 8 10 12 14 V GE (V) 16 18 20 Fig.11 - Typical V CE vs V GE Tj= 125C 20 18 16 14 V CE ( V ) 12 I CE =10A I CE =20A I CE =40A Fig.12 - Typ. Transfer Characteristics V CE =20V; tp=20s 250 225 200 175 150 C Tj=25C Tj=125C 10 8 6 4 2 0 6 8 10 12 14 V GE (V) I 100 75 50 25 0 Tj=125C Tj=25C 0 (A) 125 16 18 20 4 8 12 V GE (V) 16 20 www.irf.com 5 IRGP20B120UD-E Fig.13 - Typical Energy Loss vs Ic Tj=125C; L=200H; V CE =600V; Rg=22 ; V GE =15V 6000 Fig.14 - Typical Switching Time vs Ic Tj=125C; L=200H; V CE =600V; Rg=22 ; V GE =15V 1000 5000 Eon tdoff Energy (J) 4000 3000 Eoff t (nS) 100 tr tdon tf 2000 1000 0 0 10 20 30 I C (A) 40 50 10 0 10 20 30 40 50 I C (A) Fig.16 - Typical Switching Time vs Rg Tj=125C; L=200H; V CE =600V; I CE =20A; V GE =15V Fig.15 - Typical Energy Loss vs Rg Tj=125C; L=200H; V CE =600V; I CE =20A; V GE =15V 3000 2800 2600 2400 2200 Energy (uJ) 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 5 10 15 20 25 30 35 40 45 50 55 1000 Eon tdoff t (nS) Eoff 100 tdon tr tf 10 0 5 10 15 20 25 30 35 40 45 50 55 Rg (ohms) Rg (ohms) 6 www.irf.com IRGP20B120UD-E Fig.17 - Typical Diode I RR vs I F Tj=125C 45 40 35 30 Fig.18 - Typical Diode I RR vs Rg Tj=125C; I F =20A 45 40 35 Rg=5 IRR ( A ) 30 25 20 15 10 5 0 (A) 25 20 Rg=10 Rg=22 I 15 10 5 0 0 10 20 RR Rg=51 I F (A) 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 55 Rg (ohms) Fig.19 - Typical Diode I RR vs dI F /dt V CC =600V; V GE =15V I F =20A; Tj=125C Fig.20 - Typical Diode Q RR V CC =600V; V GE =15V; Tj=125C 7000 6500 6000 45 40 35 30 I RR ( A ) 25 20 15 Rg=5 Rg=10 22 51 50A 10 5 5500 5000 Q RR ( n C ) Rg=22 Rg=51 40A 30A 25A 20A 4500 4000 3500 3000 10 2500 10A 5 0 0 200 400 600 800 dI F / dt (A/s) 1000 1200 2000 1500 0 200 400 600 800 1000 1200 dI F / dt (A/s) www.irf.com 7 IRGP20B120UD-E 2800 2600 2400 2200 Fig.21 - Typ. Diode E rec vs. I F Tj=125C 5 10 22 51 Energy (uJ) 2000 1800 1600 1400 1200 1000 800 0 10 20 30 40 50 60 I F (A) Fig.22 - Typical Capacitance vs V CE V GE =0V; f=1MHz 10000 Fig.23 - Typ. Gate Charge vs. V GE I C =20A; L=600H 16 14 600V 800V C ies 12 CapacItance (pF) 1000 10 V GE ( V ) 8 6 C oes 100 4 C res 2 0 10 0 20 40 60 80 100 0 40 80 120 160 200 V CE (V) Q G , Total Gate Charge (nC) 8 www.irf.com IRGP20B120UD-E Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case 10 1 D =0.5 0.2 0.1 0.1 0.05 P DM 0.02 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + T C 0.01 SINGLE PULSE 0.001 0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000 t 1 , Rectangular Pulse Duration (sec) www.irf.com 9 IRGP20B120UD-E Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit L L DUT 0 VCC 80 V Rg DUT 1000V 1K Fig. CT.3 - S.C. SOA Circuit Fig. CT.4 - Switching Loss Circuit D riv er D C d iod e cla m p / DUT L 900V - 5V DUT / D R IV E R Rg DUT VCC Fig. CT.5 - Resistive Load Circuit R= VCC ICM DUT Rg VCC 10 www.irf.com IRGP20B120UD-E Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125C using Fig. CT.4 1000 25 Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125C using Fig. CT.4 800 80 90% ICE 800 20 600 90% test current 60 600 tf 15 400 tr V CE ( V ) 40 TEST CURRENT ICE ( A ) V CE ( V ) 400 10 5% VCE 200 20 10% test current 5% VCE 200 5% ICE 5 0 Eof f Loss 0 0 Eon Loss 0 -200 -0.2 0.0 0.2 0.4 0.6 0.8 t i me (s) -5 -200 -0.2 -0.1 0.0 0.1 0.2 0.3 t i me (s) -20 Fig. WF.3 - Typ. Diode Recovery Waveform @ Tj=125C using Fig. CT.4 600 30 Fig. WF.4 - Typ. S.C. Waveform @ TC=150C using Fig. CT.3 1200 250 400 QRR 20 1000 200 200 tRR 10 800 V CE (V ) ICE ( A ) 0 150 V CE ( V ) 600 100 -200 10% Peak IRR Peak IRR -10 400 -20 50 -400 -600 -30 200 0 -800 -0.2 0.0 0.2 0.4 0.6 0.8 t i me (s) -40 0 -10 0 10 t i me (s) 20 30 -50 www.irf.com ICE ( A ) 0 ICE ( A ) 11 IRGP20B120UD-E TO-247AD Case Outline and Dimensions . : WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 12/99 12 www.irf.com |
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